data dim 1200asm45 - ts000 single switch igbt module replaces ds6102 - 3 ds 6102 - 4 december 2014 (ln 3 2160 ) caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 1 / 8 www.dynexsemi.com features ? 10s short circuit withstand ? high thermal cycling capability ? hig h current density enhanced dmos spt ? isolated alsic base w ith aln substrates applications ? high reliability inverters ? motor controllers ? traction drives ? choppers the powerline rang e of high power modules includes half bridge, chopper, dual, single and bi - directional switch configurations covering voltages from 1200v to 6500v and currents up to 2400a. the dim 1200a sm45 - t s 0 00 is a single switch 45 00v, n - channel enhancement mode, insul ated gate bipolar transistor (igbt) module. the igbt has a wide reverse bias safe operating area (rbsoa) plus 10s short circuit withstand. this device is optimised for traction drives and other applications requiring high thermal cycling capability. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety . ordering information order as: dim 1200a sm45 - t s 0 00 note: when ord ering, please use the complete part number key parameters v ces 45 00v v ce(sat) * (typ) 2.7 v i c (max) 1200 a i c(pk) (max) 2400 a * measured at the auxiliary terminals fig. 1 circuit configuration outline ty pe code: a (see fig. 11 for further information) fig. 2 package 2(g) 1(e) 3(c) 5(c) 4(e) 8(e) 6(e) 7(c) 9(c)
dim1200asm45 - ts000 2 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dyn exsemi.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max . units v ces collector - emitter voltage v ge = 0v 45 00 v v ges gate - emitter voltage 20 v i c continuous collector current t case = 9 0 c 12 00 a i c(pk) peak collector current 1ms, t case = 120 c 24 00 a p max max. transistor power dissipation t case = 25 c , t j = 125 c 12.5 kw i 2 t diode i 2 t value v r = 0, t p = 10ms, t j = 125oc 460 ka 2 s v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 7.4 k v q pd partial discharge C per module iec1287, v 1 = 48 00v, v 2 = 35 00v, 50hz rms 10 pc thermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 5 6 mm clearance: 2 6 mm cti (comparative tracking index): > 600 symbol parameter test conditions min typ. max units r th(j - c) therma l resistance C th(j - c) thermal resistance C th(c - h) thermal resistance C j junction temperature transistor - - 1 25 c diode - - 125 c t stg storage temperature range - - 40 - 125 c screw torque mounting C C C
dim1200asm45 - ts000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 3 / 8 www.dynexsemi.com electrical characteristics t case = 25 c unless stated otherwise. symbol parameter test conditions min typ max units i ces collector cut - off current v ge = 0v, v ce = v ces 4 ma v ge = 0v, v ce = v ces , t case = 125 c 90 ma i ges gate leakage current v ge = 20v, v ce = 0v 1 a v ge(th) gate threshold voltage i c = 12 0ma, v ge = v ce 5.8 v v ce(sat) collector - e mitter saturation voltage v ge = 15v, i c = 12 0 0a 2. 7 v v ge = 15v, i c = 12 00a, t j = 125 c 3. 5 v i f diode forward current dc 1200 a i fm diode maximum forward current t p = 1ms 2400 a v f diode forward voltage i f = 12 00a 2.8 v i f = 12 00a, t j = 125 c 3.2 v c ies input capacitance v ce = 25v, v ge = 0v, f = 1mhz 15 0 nf q g gate charge 15v including external c ge 17 c c res reverse transfer capacitance v ce = 25v, v ge = 0v, f = 1mhz 12 nf l m module inductance 10 nh r int internal transistor resistance 90 ? sc data short circuit current, i sc t j = 125c, v cc = 34 00v t p 10s, v ge 15v v ce (max) = v ces C l * x di/dt iec 60747 - 9 4800 a note: * l is the circuit inductance + l m
dim1200asm45 - ts000 4 /8 caut ion: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 1200a v ge = 15v v ce = 28 00v r g(on) = 2.4 ? r g(off) = 2.7 ? c ge = 220nf l s ~ 165nh 3000 ns t f fall time 600 ns e off turn - off energy loss 4500 mj t d(on) turn - on delay time 900 ns t r rise time 35 0 ns e on turn - on energy loss 48 00 mj q rr diode reverse recovery cha rge i f = 12 00a v ce = 28 00v di f /dt = 3 0 0 0a/s 134 0 c i rr diode reverse recovery current 1030 a e rec diode reverse recovery energy 2220 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 1200a v ge = 15v v ce = 2800v r g(on) = 2.4 ? r g(off) = 2. 7 ? c ge = 220nf l s ~ 165nh 3100 ns t f fall time 5 6 0 ns e off turn - off energy loss 4650 mj t d(on) turn - on delay time 900 ns t r rise time 36 0 ns e on turn - on energy lo ss 6450 mj q rr diode reverse recovery charge i f = 1200a v ce = 2800v di f /dt = 30 00 a/s 2200 c i rr diode reverse recovery current 1 1 00 a e rec diode reverse recovery energy 3750 mj
dim1200asm45 - ts000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 5 / 8 www.dynexsemi.com fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collec tor current fig. 6 typical switching energy vs gate resistance
dim1200asm45 - ts000 6 /8 caut ion: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 reverse bias safe operating area fig. 9 diode reverse bias safe operating area fig. 10 transient thermal impedanc e
dim1200asm45 - ts000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 7 / 8 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 17 00 g module outline type code: a fig. 11 module outline drawing screwing depth max. 16 external connection external connection 3(c) 2(g) 1(e) 5(c) 7(c) 4(e) 6(e) 9(c) 8(e) 61.2 0.3 screwing depth max. 8 8 x 7 3 x m4 6 x m8 dim...asm....... external connection external connection 3(c) 2(g) 1(e) 7(c) 9(c) 6(e) 8(e) 5(a) 4(c) dim...acm....... 5 0.2 48 0.5 7 61.2 0.3 59.2 0.2 14 0.2 12 0.2 ? 18 0.1 44 0.4 124 0.1 140 0.5 190 0.5 171 0.15 57 0.1 41 0.2 18 0.2 38 0.5
dim1200asm45 - ts000 8 /8 caut ion: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of p roduct applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning requirements are met. should additional product information be needed please contact customer service. although we have endeavou red to carefully compile the information in this publication it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to ch ange without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to p roperty. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using pro tective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with a ll semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and prope rty. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for vo lume production is in pr ogress. the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this pub lication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations customer service dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom dynex semiconductor ltd doddingt on road, lincoln, lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 500550 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502753 / 502901 web: http://www.dynexsemi.com email: power_solutions@dynexsemi.com ? dynex semiconductor ltd. 2013. technical documentation C not for resale.
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